SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 10.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND |
| 15.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
CURRENT RATING PER CHARACTERISTIC | 30.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, INSTANTANEOUS |
POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS |
INCLOSURE MATERIAL | GLASS |
TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 15.500 MILLIMETERS MAXIMUM |
MOUNTING METHOD | TERMINAL |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -55.0 DEG CELSIUS CASE AND |
| 200.0 DEG CELSIUS CASE |
MOUNTING FACILITY QUANTITY | 4 |
TERMINAL LENGTH | 3.500 MILLIMETERS MAXIMUM |
TERMINAL CIRCLE DIAMETER | 2.800 MILLIMETERS MAXIMUM |
OVERALL DIAMETER | 0.230 INCHES MAXIMUM |
OVERALL HEIGHT | 0.210 INCHES MAXIMUM |
FEATURES PROVIDED | HERMETICALLY SEALED CASE |
SPECIAL FEATURES | UHF/MICROWAVE PNP BJT; JUNCTION PATTERN ARRANGEMENT: PNP |